Formation of cobalt impurity precipitates in silicon

Abstract

This article presents the results of studies of the structure and chemical composition of Co impurity precipitates in Si single crystals formed during high- temperature diffusion doping. The studies were carried out using the electron probe
microanalysis method. As revealed, the sizes and shapes of cobalt impurity precipitates in silicon depend on the cooling rate of the samples after diffusion annealing. It has been established that impurity cobalt precipitates, depending on their size, can have a single-layer or multilayer structure. It was also revealed that in terms of the volume of impurity precipitates, the maximum proportion of dopant atoms, as well as technological impurities, is located in their central part.